Toshiba fabricates its new 80-V N-channel power MOSFETS on its latest generation process that lowers drain-source on-resistance and improves the trade-off between the on-resistance and gate charge characteristics for lower power dissipation.
source http://www.electronicproducts.com/Discrete_Semiconductors/Transistors_Diodes/Power_MOSFETs_improve_power_supply_efficiency.aspx
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